Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
900V |
30（±V） |
3.5V |
5A |
|
|
1000(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBFB19R05SE
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 900V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 1000
- Maximum drain current (ID): 5A
- Technology: SJ_Deep-Trench
-Package: TO251
Domain and module applications：
Application examples:
The product is suitable for various fields and modules such as:
1. Power supply system: Due to its high drain-source voltage and low drain-source resistance, it can be used in power modules such as switching power supplies and DC-DC converters.
2. Electric vehicle charging piles: It has high voltage and current withstanding capabilities and can be used as power switch modules in electric vehicle charging piles.
3. Industrial electrical control: Suitable for various industrial electrical control scenarios, such as frequency converters, industrial motor control, etc.
4. Solar inverter: Due to its high reliability and strong voltage resistance, it can be used as the power switching component in solar inverters.
The above are some examples of applications of this product in different fields and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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