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VBFB19R02S Product details
Back to previous pageProduct introduction：
Product introduction:
VBsemi's VBFB19R02S model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 900V, a drain current (ID) of 2A, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO251. This MOSFET is suitable for high-voltage and high-power application scenarios and has low on-resistance and high drain current tolerance.
VBsemi's VBFB19R02S model is a single-channel N-channel power MOSFET with a drain-source voltage (VDS) of 900V, a drain current (ID) of 2A, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged as TO251. This MOSFET is suitable for high-voltage and high-power application scenarios and has low on-resistance and high drain current tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 900V | 30（±V） | 3.5V | 2A | 2700 (mΩ) | SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB19R02S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2700
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO251
- Product model: VBFB19R02S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2700
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of application areas:
1. Power management module: VBFB19R02S can be used in switching power supplies in power management modules, such as UPS systems, server power supplies, etc., to provide stable high-voltage power output.
2. Automotive electronics: In the field of automotive electronics, it is necessary to withstand high voltage and high current in automotive circuits. VBFB19R02S can be used for power control and protection circuits in automotive electronic modules.
3. Industrial automation: In the field of industrial automation, high-performance power switching devices are needed to realize motor drive and control. VBFB19R02S can be used in power switching circuits in industrial drive modules.
1. Power management module: VBFB19R02S can be used in switching power supplies in power management modules, such as UPS systems, server power supplies, etc., to provide stable high-voltage power output.
2. Automotive electronics: In the field of automotive electronics, it is necessary to withstand high voltage and high current in automotive circuits. VBFB19R02S can be used for power control and protection circuits in automotive electronic modules.
3. Industrial automation: In the field of industrial automation, high-performance power switching devices are needed to realize motor drive and control. VBFB19R02S can be used in power switching circuits in industrial drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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