Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
900V |
30（±V） |
3.5V |
2A |
|
|
2700 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB19R02S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2700
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of application areas:
1. Power management module: VBFB19R02S can be used in switching power supplies in power management modules, such as UPS systems, server power supplies, etc., to provide stable high-voltage power output.
2. Automotive electronics: In the field of automotive electronics, it is necessary to withstand high voltage and high current in automotive circuits. VBFB19R02S can be used for power control and protection circuits in automotive electronic modules.
3. Industrial automation: In the field of industrial automation, high-performance power switching devices are needed to realize motor drive and control. VBFB19R02S can be used in power switching circuits in industrial drive modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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