VBFB195R03 Product details
Product introduction:
VBsemi's VBFB195R03 is a single N-type field effect transistor with a drain-source voltage (VDS) of 950V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, and a 3A Drain current (ID). Manufactured using Plannar technology and packaged in TO251.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 950V | 30(±V) | 3.5V | 3A | 5400 (mΩ) | Plannar |
- Brand: VBsemi
- Product model: VBFB195R03
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 950V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 5400 m次
- Maximum drain current (ID): 3A
- Technology: Plannar
-Package:TO251
Domain and module applications:
Application examples:
1. Power inverter: suitable for power switching modules in industrial and household inverters.
2. Solar Charge Controller: Power conditioning unit for solar panel charge controller.
3. LED lighting system: suitable for power management modules in high-voltage LED drive circuits.
4. Automotive electronic systems: used for power switches and control modules in automobile electrification systems.
5. Industrial automation equipment: suitable for power control and regulation units in various industrial automation equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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