Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
950V |
30（±V） |
3.5V |
3A |
|
|
5400 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBFB195R03
- Type: Single N-type field effect transistor
- VDS (drain-source voltage): 950V
- VGS (gate-source voltage): 30V
- Vth (threshold voltage): 3.5V
- On-resistance at VGS=10V: 5400 m次
- Maximum drain current (ID): 3A
- Technology: Plannar
-Package:TO251
Domain and module applications：
Application examples:
1. Power inverter: suitable for power switching modules in industrial and household inverters.
2. Solar Charge Controller: Power conditioning unit for solar panel charge controller.
3. LED lighting system: suitable for power management modules in high-voltage LED drive circuits.
4. Automotive electronic systems: used for power switches and control modules in automobile electrification systems.
5. Industrial automation equipment: suitable for power control and regulation units in various industrial automation equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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