VBFB18R07S Product details
Product introduction:
VBsemi's VBFB18R07S is a single N-channel field effect transistor (MOSFET) designed for high performance and reliability. It adopts SJ_Multi-EPI technology and is packaged as TO251, which is suitable for various application scenarios.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 800V | 30(±V) | 3.5V | 7A | 850 (mΩ) | SJ_Multi-EPI |
- Product model: VBFB18R07S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 850
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications:
1. Electric vehicle charging piles: The high drain-source voltage and drain current of VBFB18R07S make it suitable for power switch modules in electric vehicle charging piles.
2. Solar inverter: Due to its high performance and reliability, it can be used as a power switch module in a solar inverter to help convert solar energy into usable AC power.
3. Industrial power module: In the industrial field, this device can be used to design industrial power modules to meet the high voltage and high power requirements of factories and equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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