Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
800V |
30（±V） |
3.5V |
7A |
|
|
850 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB18R07S
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 850
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle charging piles: The high drain-source voltage and drain current of VBFB18R07S make it suitable for power switch modules in electric vehicle charging piles.
2. Solar inverter: Due to its high performance and reliability, it can be used as a power switch module in a solar inverter to help convert solar energy into usable AC power.
3. Industrial power module: In the industrial field, this device can be used to design industrial power modules to meet the high voltage and high power requirements of factories and equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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