Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
800V |
30（±V） |
3.5V |
6A |
|
|
750(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBFB18R06SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Deep-Trench
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 750m次
- Maximum drain current (ID): 6A
-Package:TO251
Domain and module applications：
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and low on-resistance, it is suitable for designing high-voltage power switching circuits.
2. Electric vehicle charger: Its high drain-source voltage and large drain current make it a key component in electric vehicle chargers, capable of withstanding high voltages and currents.
3. Industrial control system: It can be used in power switching circuits in industrial control systems to achieve precise electrical control.
4. LED lighting driver: By controlling the current of the LED lamp, high-efficiency power regulation can be achieved in the LED lighting driver.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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