Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
800V |
30（±V） |
3.5V |
5A |
|
|
1100(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB18R05S
- Brand: VBsemi
- Type: Single N Field Effect Transistor
- VDS (drain-source voltage): 800V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Turn on resistance (VGS=10V): 1100m次
- Drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package: TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power module: VBFB18R05S can be used in switching power supplies, inverters and other circuits in industrial power modules. Its high drain-source voltage and drain current can meet industrial-level requirements.
2. Electric vehicle charger: Since this model has a high drain-source voltage and low turn-on resistance, it can be used in the charging control circuit in an electric vehicle charger to provide stable power output.
3. Solar inverter: VBFB18R05S is suitable for the DC-AC conversion part of the solar inverter and can provide reliable power conversion and energy management functions.
4. LED lighting driver: In the LED lighting driver, VBFB18R05S can be used as a switching element to realize the driving and brightness control of LED lights to ensure the stability and efficiency of the lighting system.
The above is an introduction to the VBFB18R05S model product, detailed parameter descriptions, and examples of applicable fields and modules in the form of paragraphs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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