Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
850V |
30（±V） |
3.5V |
2A |
|
|
6500 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBFB185R02
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: Plannar
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 6500m次
- Maximum drain current (ID): 2A
-Package: TO251
Domain and module applications：
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and large on-resistance, it is suitable for designing low-power switching power supplies and voltage regulators.
2. Power tool controller: It can be used as a power switch module in power tools to achieve precise control and drive of the motor.
3. LED lighting driver: In LED lighting drivers, it can be used in power switching circuits to achieve high-efficiency driving and brightness adjustment of LED lights.
4. Industrial automation sensors: Can be used for power switch control in industrial sensor modules to provide reliable power supply and data collection.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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