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VBFB1806 Product details
Back to previous pageProduct introduction：
VBFB1806 is a high-performance single-channel N-type MOSFET with a saturated drain-source voltage of 80V and a standard ±20V gate-source voltage range. The threshold voltage is 3V, the drain-source on-resistance is 9mΩ (when VGS=4.5V) and 6mΩ (when VGS=10V) respectively at different gate-source voltages, and the maximum drain current is 75A. It adopts Trench channel technology and is packaged as TO251.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 80V | 20（±V） | 3V | 75A | 9 (mΩ) | 6 (mΩ) | Trench |
**Product model:** VBFB1806
**Brand:** VBsemi
**parameter:**
- **Single N**: Single channel N-type MOSFET
- **VDS(V)**: Saturated drain-source voltage 80V
- **VGS(㊣V)**: Standard gate-source voltage range ㊣20V
- **Vth(V)**: Threshold voltage 3V
- **VGS=4.5V(m次)**: drain-source on-resistance 9m次 when gate-source voltage is 4.5V
- **VGS=10V(m次)**: drain-source on-resistance 6m次 when gate-source voltage is 10V
- **ID (A)**: Maximum drain current 75A
- **Technology:** Trench channel technology
- **Package:** TO251
**Brand:** VBsemi
**parameter:**
- **Single N**: Single channel N-type MOSFET
- **VDS(V)**: Saturated drain-source voltage 80V
- **VGS(㊣V)**: Standard gate-source voltage range ㊣20V
- **Vth(V)**: Threshold voltage 3V
- **VGS=4.5V(m次)**: drain-source on-resistance 9m次 when gate-source voltage is 4.5V
- **VGS=10V(m次)**: drain-source on-resistance 6m次 when gate-source voltage is 10V
- **ID (A)**: Maximum drain current 75A
- **Technology:** Trench channel technology
- **Package:** TO251
Domain and module applications：
**Application introduction and examples:**
1. **Power module application:**
Since VBFB1806 has high saturation drain-source voltage and drain current capabilities, it is suitable for use in switching circuits in power modules. For example, it can be used as a power switching device in switching power supplies to provide stable power output with low conduction losses, making the power module highly efficient and reliable.
2. **Motor driver application:**
In the motor driver, VBFB1806 can be used as a switching device in the motor control circuit to control the start, stop and speed adjustment of the motor. Its high drain current capability and low on-resistance ensure that the motor driver has high power density and response speed, and is suitable for various motor drive applications, such as electric vehicle control, industrial machinery drive, etc.
3. **Power management module application:**
In the power management module, VBFB1806 can be used as a key device in power switches, voltage regulators and other circuits to achieve power management and stable output. Its high saturation drain-source voltage and low on-resistance characteristics help improve the efficiency and stability of the power management module, and are suitable for the power management needs of various electronic devices, such as notebook computers, communication equipment, etc.
1. **Power module application:**
Since VBFB1806 has high saturation drain-source voltage and drain current capabilities, it is suitable for use in switching circuits in power modules. For example, it can be used as a power switching device in switching power supplies to provide stable power output with low conduction losses, making the power module highly efficient and reliable.
2. **Motor driver application:**
In the motor driver, VBFB1806 can be used as a switching device in the motor control circuit to control the start, stop and speed adjustment of the motor. Its high drain current capability and low on-resistance ensure that the motor driver has high power density and response speed, and is suitable for various motor drive applications, such as electric vehicle control, industrial machinery drive, etc.
3. **Power management module application:**
In the power management module, VBFB1806 can be used as a key device in power switches, voltage regulators and other circuits to achieve power management and stable output. Its high saturation drain-source voltage and low on-resistance characteristics help improve the efficiency and stability of the power management module, and are suitable for the power management needs of various electronic devices, such as notebook computers, communication equipment, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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