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VBFB17R11S Product details

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Product introduction：

Product introduction:
VBsemi's VBFB17R11S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 450mΩ at VGS=10V, and a maximum Drain current (ID) is 11A. The package form is TO251.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 700V 30（±V） 3.5V 11A 450 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 450m次
- ID (A): 11A
- Technology: SJ_Multi-EPI
-Package: TO251

Domain and module applications：

Examples of application areas and modules:
- Solar inverter: suitable for switching circuits in solar inverters to achieve high-efficiency conversion from solar panels to the grid.
- Automotive electronic systems: Used as power switches in automotive electronic systems, such as battery management systems and electric motor control modules for electric vehicles.
-Industrial automation equipment: used as high-voltage switching components in industrial automation equipment to achieve precise control and protection of equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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