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VBFB17R07S Product details

Product introduction:

VBsemi's VBFB17R07S is a single N-channel field effect transistor with a drain-source voltage of 700V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO251.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 700V 30(±V) 3.5V 7A 750 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI

Domain and module applications:

This product is suitable for the following areas and modules:
- Electric vehicles: Motor drives and battery management systems that can be used in electric vehicles, providing high efficiency and reliability.
- Solar inverter: suitable for inverter modules in solar power generation systems, providing stable power conversion and control.
- Industrial automation: It can be used in industrial power modules, frequency converters and UPS systems to meet the needs of industrial equipment for power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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