Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
700V |
30（±V） |
3.5V |
4A |
|
|
1100(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBFB17R04SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 1100m次
- Drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. LED lighting: Since VBFB17R04SE has a high drain-source voltage and low on-resistance, it is suitable for switching power supplies and inverters in LED lighting drive circuits to achieve high-efficiency LED lighting.
2. Low-power power supply: The product's low drain current and packaging form are suitable for low-power power modules, such as power management circuits in portable electronic devices and wireless sensor networks.
3. Automotive electronics: In the field of automotive electronics, VBFB17R04SE can be used in vehicle power converters and drivers to provide stable power supply and motor control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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