VBFB17R04SE Product details
Product introduction:
VBFB17R04SE is a VBsemi brand single N-channel field effect transistor with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Deep-Trench technology and is packaged in TO251. Its main features are an on-resistance of 1100mΩ (at VGS=10V) and a drain current (ID) of 4A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 30(±V) | 3.5V | 4A | 1100(mΩ) | SJ_Deep-Trench |
- Model: VBFB17R04SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 1100m次
- Drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications:
1. LED lighting: Since VBFB17R04SE has a high drain-source voltage and low on-resistance, it is suitable for switching power supplies and inverters in LED lighting drive circuits to achieve high-efficiency LED lighting.
2. Low-power power supply: The product's low drain current and packaging form are suitable for low-power power modules, such as power management circuits in portable electronic devices and wireless sensor networks.
3. Automotive electronics: In the field of automotive electronics, VBFB17R04SE can be used in vehicle power converters and drivers to provide stable power supply and motor control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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