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VBFB17R04 Product details

Product introduction:

Product Introduction: VBsemi's VBFB17R04 is a single N-channel power MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS, plus or minus) of 30V, and a threshold voltage of 3.5V ( Vth). It adopts Plannar technology and is packaged as TO251.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 700V 30(±V) 3.5V 4A 3250 (mΩ) 2600 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS, plus or minus): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 3250m次
- On-resistance when VGS=10V: 2600m次
- Maximum drain current (ID): 4A

Domain and module applications:

Examples of applicable fields and modules:
1. Power adapter: VBFB17R04 has a high drain-source voltage and moderate drain current, and is suitable for designing various types of power adapters, such as laptop chargers, mobile phone chargers, etc.
2. Lighting LED driver: In LED lighting systems, efficient power MOSFETs are required to drive LEDs. VBFB17R04 can be used to design LED drivers to provide stable current output.
3. Power tool control module: Because VBFB17R04 has a high drain-source voltage and moderate drain current, it can be used to design power control modules for power tools, such as electric drills, electric hammers, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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