Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
700V |
30（±V） |
3.5V |
2A |
|
|
2200(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB17R02SE
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 2200m次
- Maximum drain current (ID): 2A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Low-power electronic devices: Due to its low drain current characteristics, it can be used for power management and control in fields such as portable electronics, smart sensors, and wearable devices.
- Medical equipment: Suitable for power switches and circuit protection in medical equipment to ensure the safety and reliability of the equipment.
- Automotive electronic systems: It can be used for power management and circuit protection in areas such as automotive electronic control units, body electronic systems and in-vehicle entertainment equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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