VBFB17R02SE Product details
Product introduction:
VBsemi's VBFB17R02SE is a single N-channel MOSFET manufactured using SJ_Deep-Trench technology. It has high performance and reliability, and is packaged in TO251, suitable for various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 700V | 30(±V) | 3.5V | 2A | 2200(mΩ) | SJ_Deep-Trench |
- Brand: VBsemi
- Model: VBFB17R02SE
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 2200m次
- Maximum drain current (ID): 2A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
- Low-power electronic devices: Due to its low drain current characteristics, it can be used for power management and control in fields such as portable electronics, smart sensors, and wearable devices.
- Medical equipment: Suitable for power switches and circuit protection in medical equipment to ensure the safety and reliability of the equipment.
- Automotive electronic systems: It can be used for power management and circuit protection in areas such as automotive electronic control units, body electronic systems and in-vehicle entertainment equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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