VBFB16R11S Product details
Product introduction:
VBsemi's VBFB16R11S is a single N-channel MOSFET designed for high performance and reliability. Manufactured using SJ_Multi-EPI technology, suitable for a variety of electronic applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 600V | 30(±V) | 3.5V | 11A | 380 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBFB16R11S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 380
- Maximum drain current (ID): 11A
- Process technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications:
1. Power module: VBFB16R11S can be used in switching power modules, voltage regulators and DC-DC converters to provide high-efficiency power solutions.
2. Electric vehicle controller: In the motor drive controller of electric vehicles, this MOSFET can be used in motor drivers and braking systems to provide stable and reliable power output.
3. Solar inverter: Used in solar inverters, VBFB16R11S can be used as a switching tube to convert the DC power generated by the solar panel into AC power for use in the power supply network.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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