Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
600V |
30（±V） |
3.5V |
11A |
|
|
380 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB16R11S
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 380
- Maximum drain current (ID): 11A
- Process technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBFB16R11S can be used in switching power modules, voltage regulators and DC-DC converters to provide high-efficiency power solutions.
2. Electric vehicle controller: In the motor drive controller of electric vehicles, this MOSFET can be used in motor drivers and braking systems to provide stable and reliable power output.
3. Solar inverter: Used in solar inverters, VBFB16R11S can be used as a switching tube to convert the DC power generated by the solar panel into AC power for use in the power supply network.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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