Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
600V |
30（±V） |
3.5V |
10A |
|
|
450 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB16R10S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 600V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 450
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: Because VBFB16R10S has a high drain-source voltage and a large drain current, it is suitable for designing high-performance switching power supplies and inverter modules.
2. Electric vehicle charging pile: Its voltage resistance and conduction characteristics make it a key power device in electric vehicle charging piles, ensuring high efficiency and stability.
3. Industrial control systems: In industrial control systems that need to withstand high voltages and large currents, VBFB16R10S can be used as a switching device to provide reliable performance and long-term stability.
4. Solar inverter: suitable for power conversion and control circuits in solar inverters, providing high efficiency and reliability energy conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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