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VBFB16R07 Product details

Product introduction:

Product introduction:
VBsemi's VBFB16R07 is a single N-channel field effect transistor suitable for a variety of power electronic applications. The device has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 7A, and a threshold voltage (Vth) of 3.5V. Manufactured using Plannar technology and packaged in TO251, it has good heat dissipation performance and stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 30(±V) 3.5V 7A 1500 (mΩ) 1200 (mΩ) Plannar
Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Static drain-source resistance (VGS=4.5V): 1500 m次
- Static drain-source resistance (VGS=10V): 1200 m次
- Drain current (ID): 7A
- Technology: Plannar
-Package:TO251

Domain and module applications:

Application examples:
1. Power management module: Because VBFB16R07 has high drain-source voltage and drain current capabilities, it is suitable for use in switching power supplies, inverters and other parts of the power management module.
2. Automotive electronics field: In automotive electronic systems, power devices with high stability and high voltage capabilities are required. VBFB16R07 can be used in automotive power management, drive control and other modules.
3. LED lighting driver: LED lighting products require stable current drive. VBFB16R07 can be used as a switching element in the LED driver module to provide stable current output.
4. Motor drive: In the motor control module, VBFB16R07 can be used as a motor drive device to provide efficient motor drive control.
5. Solar inverter: In the solar inverter, VBFB16R07 can be used to convert the DC power generated by the solar panel into AC power, which is suitable for the inverter part of the solar power generation system.

These fields and modules require high-performance power devices to achieve stable power supply and effective energy conversion. As a high-performance field effect transistor, VBFB16R07 has broad application prospects in these fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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