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VBFB16R05S Product details

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Product introduction：

Product Introduction: VBsemi’s VBMB16R05S model is a single N-channel MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This product is manufactured using SJ_Multi-EPI technology and is packaged in TO220F.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 600V 30（±V） 3.5V 5A 850 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS (drain-source voltage): 600V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 850m次
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package: TO220F

Domain and module applications：

Examples of applicable fields and modules:
- Power module: Suitable for low-power power modules, such as small DC power supplies and switching power supplies.
- LED driver: Can be used in power switch modules in LED drivers to achieve efficient driving and control of LED lamps.
- Power tools: Suitable for power switch modules in power tools, such as electric drills and electric hammers, to achieve efficient motor drive and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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