Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
600V |
30（±V） |
2.5V |
6.2A |
|
1000 (mΩ) |
800 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB16R05
- MOSFET type: Single N-channel
- Rated drain-source voltage (VDS): 600V
- Standard gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (m次) at VGS=4.5V: 1000
- Drain-source resistance (m次) at VGS=10V: 800
- Maximum drain current (ID): 6.2A
- Process technology: flat process
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Industrial power modules: The high rated drain-source voltage and low drain-source resistance of VBFB16R05 make it suitable for industrial power modules for converter and inverter designs.
2. Automotive electronic systems: Due to its high performance and reliability, VBFB16R05 can be used in electric vehicle chargers and drivers in automotive electronic systems.
3. Solar inverter: In the solar inverter, VBFB16R05 can be used as a switching tube to convert the DC power generated by the solar panel into AC power for use in the power supply network.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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