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VBFB165R11S Product details

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Product introduction：

Product introduction:
The VBsemi branded VBFB165R11S model is a single N-channel MOSFET offering high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO251, it is suitable for various power supply and power control applications.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 650V 30（±V） 3.5V 11A 370(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, the drain-source resistance is 370m次
- Maximum drain current ID is 11A

Domain and module applications：

Examples of applicable fields and modules:
1. Power inverter: VBFB165R11S is suitable for power switch modules in power inverters, helping to improve the efficiency and stability of the inverter.
2. Automotive electronics: This MOSFET can be used in electric vehicle charging piles in automotive electronic systems, providing reliable power output and supporting fast charging of electric vehicles.
3. Solar photovoltaic system: VBFB165R11S is suitable for DC to AC inverter modules in solar photovoltaic systems, helping to improve the energy conversion efficiency of photovoltaic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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