VBFB165R11S Product details
Product introduction:
The VBsemi branded VBFB165R11S model is a single N-channel MOSFET offering high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO251, it is suitable for various power supply and power control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 30(±V) | 3.5V | 11A | 370(mΩ) | SJ_Multi-EPI |
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- At VGS=10V, the drain-source resistance is 370m次
- Maximum drain current ID is 11A
Domain and module applications:
1. Power inverter: VBFB165R11S is suitable for power switch modules in power inverters, helping to improve the efficiency and stability of the inverter.
2. Automotive electronics: This MOSFET can be used in electric vehicle charging piles in automotive electronic systems, providing reliable power output and supporting fast charging of electric vehicles.
3. Solar photovoltaic system: VBFB165R11S is suitable for DC to AC inverter modules in solar photovoltaic systems, helping to improve the energy conversion efficiency of photovoltaic systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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