Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
8A |
|
|
550(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBFB165R08S
- Brand: VBsemi
- Type: Single N MOSFET
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-to-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V: 550m次
- Maximum drain current (ID): 8A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Example application:
1. Power module: VBFB165R08S is suitable for power switches of power modules, such as power inverters and switching power supplies, providing stable and reliable power conversion and control functions.
2. Solar inverter: In solar power generation systems, VBFB165R08S can be used in the DC-AC conversion stage of the inverter to help achieve effective utilization of solar energy.
3. Electric vehicle charging piles: As a power switching element in electric vehicle charging piles, this device can support high voltage and current, providing safe and efficient charging functions.
4. Industrial automation equipment: This device is suitable for power switch modules in industrial robots, automation equipment, PLC and other systems to ensure stable operation of equipment and efficient energy conversion.
5. LED lighting control: In LED lighting systems, VBFB165R08S can be used for power switch control of LED drive circuits to help realize energy saving and dimming functions of the lighting system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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