Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
7A |
|
|
700 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBFB165R07S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 700
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Electric vehicle charging pile: The voltage resistance and current carrying capacity of VBFB165R07S make it an important component in electric vehicle charging piles, ensuring high efficiency and stability.
2. Industrial power module: Suitable for designing industrial power modules to ensure stable and reliable power output to meet the needs of various industrial applications.
3. Solar inverter: Used in power conversion and control circuits in solar inverters to provide high-efficiency and reliable energy conversion solutions.
4. Power tools and household appliances: In power tools and household appliances that need to withstand high voltage and large current, it serves as a power switching device to ensure the performance and stability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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