VBFB165R07S Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 30(±V) | 3.5V | 7A | 700 (mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBFB165R07S
- Type: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 650V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 700
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO251
Domain and module applications:
1. Electric vehicle charging pile: The voltage resistance and current carrying capacity of VBFB165R07S make it an important component in electric vehicle charging piles, ensuring high efficiency and stability.
2. Industrial power module: Suitable for designing industrial power modules to ensure stable and reliable power output to meet the needs of various industrial applications.
3. Solar inverter: Used in power conversion and control circuits in solar inverters to provide high-efficiency and reliable energy conversion solutions.
4. Power tools and household appliances: In power tools and household appliances that need to withstand high voltage and large current, it serves as a power switching device to ensure the performance and stability of the equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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