Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
4A |
|
|
950(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBFB165R04SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 950m次
- Maximum continuous drain current (ID): 4A
- Technology: SJ_Deep-Trench
-Package: TO251
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBFB165R04SE is suitable for switching power supplies, inverters and voltage regulators in power modules, and can be used in industrial control and communication equipment and other fields.
2. LED lighting: As a key component of the LED lighting driver, VBFB165R04SE can realize efficient driving and dimming control of LED lamps, and is suitable for indoor lighting and automotive lighting and other scenarios.
3. Solar inverter: In the solar power generation system, VBFB165R04SE can be used as a switching tube in the inverter to realize the conversion and transmission of solar energy.
4. Automotive electronics: Due to its high performance and stability, VBFB165R04SE can be used in automotive electronic systems, such as power conversion modules and charging pile controllers for electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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