Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
4A |
|
|
2200 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBFB165R04
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: Plannar
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 2200m次
- Drain current (ID): 4A
-Package:TO251
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Low-power power module: Due to its low drain current and high drain-source voltage, it is suitable for low-power power modules, such as mobile phone chargers, laptop power adapters, etc.
2. LED drive circuit: It can be used for power switch control of LED light bars, LED bulbs and other lighting products to help improve the efficiency and stability of LED lamps.
3. Automotive electronic modules: Suitable for motor drive, power management and other functions in automotive electronic modules to improve the performance and reliability of automotive systems.
4. Industrial control system: used for power switches and current control in industrial control systems to help achieve efficient operation and stability of industrial equipment.
The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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