Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
3A |
|
|
1600(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBFB165R03SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 1600m次
- Maximum continuous drain current (ID): 3A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
1. LED lighting: Since VBFB165R03SE has high voltage tolerance and on-resistance, it is suitable for switch control in LED lighting drivers to achieve efficient brightness adjustment and energy-saving effects of LED lamps.
2. Power management: In various power management applications, VBFB165R03SE can be used as a key component in modules such as switching power supplies, inverters and voltage regulators to ensure stable output and efficient conversion of power.
3. Industrial control: In industrial control equipment, VBFB165R03SE can be used as power switches and control components, such as PLC controllers, frequency converters and robot control systems, to achieve efficient operation and precise control of equipment.
4. Automotive electronics: In automotive electronic systems, VBFB165R03SE can be used in power conversion modules and charging pile controllers of electric vehicles to ensure the stable and safe operation of the vehicle power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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