VBFB165R03SE Product details
Product introduction:
VBsemi VBFB165R03SE is a Single N MOSFET, using SJ_Deep-Trench technology and packaged in TO251. Offers high performance and stability for a variety of power control and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 30(±V) | 3.5V | 3A | 1600(mΩ) | SJ_Deep-Trench |
- Brand: VBsemi
- Product model: VBFB165R03SE
- MOSFET type: Single N
- Rated voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 1600m次
- Maximum continuous drain current (ID): 3A
- Technology: SJ_Deep-Trench
-Package:TO251
Domain and module applications:
1. LED lighting: Since VBFB165R03SE has high voltage tolerance and on-resistance, it is suitable for switch control in LED lighting drivers to achieve efficient brightness adjustment and energy-saving effects of LED lamps.
2. Power management: In various power management applications, VBFB165R03SE can be used as a key component in modules such as switching power supplies, inverters and voltage regulators to ensure stable output and efficient conversion of power.
3. Industrial control: In industrial control equipment, VBFB165R03SE can be used as power switches and control components, such as PLC controllers, frequency converters and robot control systems, to achieve efficient operation and precise control of equipment.
4. Automotive electronics: In automotive electronic systems, VBFB165R03SE can be used in power conversion modules and charging pile controllers of electric vehicles to ensure the stable and safe operation of the vehicle power system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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