Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
2A |
|
|
2300 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBFB165R02S
- Brand: VBsemi
- Type: Single N-channel power field effect transistor (MOSFET)
- Technology: SJ_Multi-EPI
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when gate-source voltage is 10V: 2300m次
- Drain current (ID): 2A
-Package:TO251
Domain and module applications：
Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and low on-resistance, it can be used for power switching and current control in the power management module to improve the efficiency and stability of the system.
2. LED lighting driver: suitable for power switch control in LED lighting drive circuits to help achieve high efficiency and stability of LED lamps, such as LED bulbs, street lights, etc.
3. Power tool drive: It can be used in the motor drive system in power tools to provide high-efficiency power switching and current control, such as electric drills, electric saws, etc.
4. Solar inverter: Inverter used in solar photovoltaic systems to convert solar power into AC power and provide it to household and industrial power systems.
The above are some examples. This product can also be used in other fields and modules that require high-performance power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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