Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
650V |
30（±V） |
3.5V |
2A |
|
|
4300 (mΩ) |
Plannar |
Parameter Description:
- Model: VBFB165R02
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 4300m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO251
Domain and module applications：
Examples of applicable fields and modules:
This product is suitable for the following areas and modules:
1. Low-power power supply: used in low-power power inverters, voltage regulators and switching power supplies.
2. Power tools: As power switches and power controllers for power tools, such as electric drills, electric saws, etc.
3. Electric vehicles: It is used in electric control systems in small electric vehicles such as electric bicycles and electric scooters.
4. LED driver: used for low-power LED lighting products, such as LED bulbs, light strips, etc.
5. Smart home equipment: used for power control and power switches in smart sockets, smart switches and other equipment.
These fields and modules require low-power, high-efficiency MOSFETs to implement power control and switching functions, and VBFB165R02 is an ideal choice to meet these requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
