VBFB165R02 Product details
Product introduction:
VBsemi's VBFB165R02 is a single N-channel field effect transistor (MOSFET) with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V . This MOSFET has an on-resistance of 4300mΩ when VGS=10V and can withstand a maximum drain current (ID) of 2A. It adopts Plannar technology and is packaged as TO251.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 30(±V) | 3.5V | 2A | 4300 (mΩ) | Plannar |
- Model: VBFB165R02
- Brand: VBsemi
- Type: Single N-channel field effect transistor (MOSFET)
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 4300m次
- Maximum drain current (ID): 2A
- Technology: Plannar
-Package:TO251
Domain and module applications:
This product is suitable for the following areas and modules:
1. Low-power power supply: used in low-power power inverters, voltage regulators and switching power supplies.
2. Power tools: As power switches and power controllers for power tools, such as electric drills, electric saws, etc.
3. Electric vehicles: It is used in electric control systems in small electric vehicles such as electric bicycles and electric scooters.
4. LED driver: used for low-power LED lighting products, such as LED bulbs, light strips, etc.
5. Smart home equipment: used for power control and power switches in smart sockets, smart switches and other equipment.
These fields and modules require low-power, high-efficiency MOSFETs to implement power control and switching functions, and VBFB165R02 is an ideal choice to meet these requirements.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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