Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-N |
250V |
20（±V） |
3V |
3.8A |
|
|
1100 (mΩ) |
Trench |
parameter:
- Type: Single N channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 250V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source on-resistance (m次) at VGS=10V: 1100
- Maximum drain current (ID): 3.8A
- Technology: Trench structure (Trench)
Package: TO251
Domain and module applications：
Application examples:
1. Power module: VBFB1251K can be used as a power switch in a power module to stabilize and regulate voltage, and is suitable for various portable electronic devices and consumer electronics.
2. Electric vehicle charger: In electric vehicle chargers, VBFB1251K can be used for power conversion and current control to help achieve fast charging and efficient energy conversion.
3. Industrial automation control: In industrial automation systems, VBFB1251K can be used in switching power supplies, motor drivers and other high-power applications to provide reliable power control and electrical isolation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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