Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO251 |
Single-P |
-150V |
20（±V） |
-2V |
-15A |
|
180 (mΩ) |
160 (mΩ) |
Trench |
Detailed parameter description:
- Rated drain-source voltage (VDS): -150V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) when gate-source voltage is 4.5V: 180m次
- Drain-source resistance (m次) when gate-source voltage is 10V: 160m次
- Quiescent drain current (ID): -15A
Domain and module applications：
Application introduction:
VBF2152M is suitable for a variety of fields and modules. It has the characteristics of high-performance power switches and can be used in the following scenarios:
1. Electric vehicles: This MOSFET can be used in battery management systems and motor control modules in electric vehicles to provide efficient power output and drive control.
2. Power inverter: Among power inverters, VBF2152M can be used for high-efficiency power conversion and stable output power, and is suitable for solar inverters, UPS systems, etc.
3. Industrial control: Suitable for power switch modules in industrial control equipment, such as frequency converters, servo drives, etc., to achieve high performance and reliability.
4. Communication equipment: This MOSFET can be used in power management and power amplifier modules in communication equipment, such as base stations, communication servers, etc., to ensure stable operation and high performance of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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