Product introduction：
VBsemi's VBE3310 is a dual-channel N-channel field effect transistor (Dual N+N), manufactured using the Trench process. Its main parameters include: maximum drain-source voltage (VDS) of 30V, maximum gate-source voltage (VGS) of ±20V, threshold voltage (Vth) of 1.7V, and different gate-source On-resistance under voltage, etc. The device is packaged in TO252-4L and is suitable for use in electronic systems that require high performance and high reliability, such as modules in power amplification, power switches, and LED lighting.
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Domain and module applications：
Application example:
1. **Power amplification module**: The dual-channel design of VBE3310 makes it very suitable for use in power amplification circuits in power amplification modules. For example, in audio amplifiers, it can be used as an output stage power tube to help amplify and drive audio signals.
2. **Power Switch Module**: Since VBE3310 has high maximum drain-source voltage and current handling capability, it is also very suitable for use in switching power supply circuits in power switch modules. For example, in DC-DC converters, it can be used as a switching tube to help achieve efficient power conversion and stable output.
3. **LED lighting driver module**: The device's high voltage withstand capability and low on-resistance make it widely used in LED lighting driver modules. For example, in LED drivers, it can be used as a drive tube to help achieve efficient driving and brightness control of LED lights.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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