VBE2610N is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET).
The high performance and reliability of the VBE2610N enable it to play an important role in a variety of industrial and consumer electronics applications.
The device is manufactured using trench technology and the device is packaged in TO252.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | 20（±V） | -1.7V | -30A | 100 (mΩ) | 90 (mΩ) | Trench |
Has the following main parameters:
- Rated drain-source voltage (VDS): -60V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 100 (mΩ)
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 90 (mΩ)
- Maximum drain current (ID): -30A
The application of groove technology gives it excellent performance in a variety of applications. For example,
In the power management module, VBE2610N can be used in voltage regulators, power switch modules and other fields. Its low on-resistance and high threshold voltage make it particularly suitable for applications requiring high efficiency and stability, such as power amplifier modules in wireless communication equipment, LED lighting drivers, etc. In addition, its low threshold voltage and large drain current rating also make it an ideal choice for home appliance control modules, industrial motor controllers, and other fields.
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