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VBE2152M Product details

Product introduction:

VBE2152M is a single P-channel trench field effect transistor (MOSFET) launched by the VBsemi brand. It can be used as a powerful and stable single P-channel MOSFET. It is suitable for a variety of fields and modules and can realize power switch control and power management. and signal amplification functions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -150V 20(±V) -2V -15A 160 (mΩ) Trench
Has the following parameters and properties:

- **VDS(V):** The maximum drain-source voltage is -150V, suitable for medium voltage application scenarios.
- **VGS(㊣V):** The gate-source voltage range is ㊣20V, providing a larger control range.
- **Vth(V):** The threshold voltage is -2V, which means conduction starts at this voltage.
- **VGS=10V(m次):** The drain-source resistance is 160m次 when the gate-source voltage is 10V.
- **ID (A):** Maximum drain current is -15A, suitable for higher current applications.
- **Technology:** Manufactured using Trench technology, with good performance and stability.
- **Package:** Using TO252 package, suitable for compact space applications.

Domain and module applications:

This product is suitable for a variety of fields and modules, examples are as follows:

In the power management module, VBE2152M can be used as a switching tube for power switch control and power management, such as in power inverters, DC-DC converters and LED drivers.

In automotive electronic modules, VBE2152M can be used in automotive electric motor drivers and controllers for battery management systems and power switch control of automotive electronic equipment.

In the field of industrial automation, VBE2152M can be used for power switch control in equipment such as industrial robots, PLC controllers and frequency converters to achieve precise motion control and energy consumption management.

In the communication equipment module, VBE2152M can be used in the power amplifier and power management unit of the communication base station to achieve signal amplification and stable power supply.

To sum up, VBE2152M, as a powerful and stable single P-channel MOSFET, is suitable for a variety of fields and modules, and can realize functions such as power switch control, power management and signal amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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