Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-P |
-100V |
20（±V） |
-2V |
-40A |
|
37 (mΩ) |
33 (mΩ) |
Trench |
**Product model:** VBE2104N
**Brand:** VBsemi
**parameter:**
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -100V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (m次) at VGS=4.5V: 37
- Drain-source resistance (m次) at VGS=10V: 33
- Maximum drain current (ID): -40A
- Technology: Trench
**Package:** TO252
Domain and module applications：
TO252 package is suitable for medium power applications, with good heat dissipation performance and ease of installation.
**for example:**
1. Power switch module: VBE2104N can be used for switching circuit and power control in the power switch module to ensure efficient and stable operation of the power system and reduce power loss.
2. Electric vehicle charging module: Among electric vehicle charging modules, VBE2104N is suitable for charge controllers and power inverters to ensure the charging efficiency and safety of electric vehicles and increase charging speed.
3. Power inverter module: Since VBE2104N has lower drain-source resistance and higher drain current, it can be used for power inversion and voltage regulation in the power inverter module to improve the efficiency and stability of the system. sex.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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