Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
900V |
30（±V） |
3.5V |
2A |
|
|
2700 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBE19R02S
- Brand: VBsemi
- Parameters:
- Type: Single N
- Rated drain-source voltage (VDS): 900V
- Rated gate-source voltage (VGS): ㊣30V
- Turn-on voltage (Vth): 3.5V
- On-resistance at VGS=10V: 2700m次
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of application areas:
1. Solar inverter: Since VBE19R02S has a high rated drain-source voltage and moderate on-resistance, it is suitable for power switches in solar inverters to convert DC power generated by solar photovoltaic panels into AC power. , supplying power to domestic or industrial power networks.
2. Electric vehicle charging piles: The performance characteristics of this device make it very suitable for use as power switches in electric vehicle charging piles to control the current and voltage during the charging process to achieve fast and efficient charging.
3. Industrial automation equipment: VBE19R02S can be used as power switch modules in industrial automation equipment, such as PLC, frequency converters, etc., to control the start, stop and operating status of the equipment.
These areas and modules require the use of power MOSFETs to control current and voltage, and the performance characteristics of the VBE19R02S make it an ideal choice in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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