Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
800V |
30（±V） |
3.5V |
7A |
|
|
770(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBE18R07S
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 770 m次
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
VBE18R07S MOSFET is suitable for a variety of fields and modules. The following are some typical application scenarios:
1. Power supply module: used in switching power supplies, inverters, etc. to control current and voltage output.
2. Electric vehicle charge and discharge management: used in chargers and motor drive systems of electric vehicles to manage the battery charge and discharge process.
3. Industrial control: suitable for current and voltage control modules in industrial automation equipment, such as frequency converters, PLCs, etc.
4. Lighting applications: Can be used in LED drive circuits to adjust the brightness and color temperature of lighting equipment.
5. Automotive electronics: Suitable for functional modules such as power management, motor drive and control in automotive electronic systems.
The above are some typical application scenarios of VBE18R07S MOSFET. Its characteristics make it have wide application potential in various applications requiring high voltage and high current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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