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VBE18R06S Product details

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Product introduction：

Product introduction:
VBE18R06S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO252.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 800V 30（±V） 3.5V 6A 850(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 850m次
- Maximum drain current (ID): 6A

Domain and module applications：

Examples of applicable fields and modules:
- Solar inverter: Due to its high voltage and high energy efficiency characteristics, VBE18R06S can be used as a DC-AC conversion module in a solar inverter to convert DC power generated by solar panels into AC power that can be used in the grid.
- Industrial power modules: In the industrial field, this product can be used in switching power supplies, motor drives, and power transmission and distribution systems in industrial power modules.
- Electric vehicle charging piles: VBE18R06S is suitable for DC charging modules in electric vehicle charging piles to achieve fast and efficient charging of electric vehicle batteries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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