VBE18R06S Product details
Product introduction:
VBE18R06S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO252.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 30(±V) | 3.5V | 6A | 850(mΩ) | SJ_Multi-EPI |
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 850m次
- Maximum drain current (ID): 6A
Domain and module applications:
- Solar inverter: Due to its high voltage and high energy efficiency characteristics, VBE18R06S can be used as a DC-AC conversion module in a solar inverter to convert DC power generated by solar panels into AC power that can be used in the grid.
- Industrial power modules: In the industrial field, this product can be used in switching power supplies, motor drives, and power transmission and distribution systems in industrial power modules.
- Electric vehicle charging piles: VBE18R06S is suitable for DC charging modules in electric vehicle charging piles to achieve fast and efficient charging of electric vehicle batteries.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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