Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
800V |
30（±V） |
3.5V |
5A |
|
|
1000(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Model: VBE18R05SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: SJ_Deep-Trench
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 1000m次
- Maximum drain current (ID): 5A
-Package:TO252
Domain and module applications：
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: It has a high drain-source voltage and moderate on-resistance, and is suitable for designing general switching power supplies and voltage regulators.
2. Industrial control system: It can be used as a power switch module in an industrial control system to achieve precise control of industrial equipment.
3. Lighting applications: Suitable for LED drive circuits and other lighting applications, providing reliable power switching function.
4. Automotive electronic systems: It can be used for power control and protection in automotive electronic modules, such as engine control units (ECU) and lighting systems.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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