Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
800V |
30（±V） |
3.5V |
5A |
|
|
1100(mΩ) |
SJ_Multi-EPI |
**Detailed parameter description:**
- Brand: VBsemi
- Model: VBE18R05S
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 1100
- Maximum drain current (ID): 5A
- Technology: SJ_Multi-EPI
-Package: TO252
Domain and module applications：
**Application areas and module examples:**
1. Industrial power module: The high drain-source voltage and stable performance of VBE18R05S make it an ideal choice among industrial power modules and can be used in factory automation, robotics and other fields.
2. Electric vehicle charger: Due to its high drain-source current and reliability, VBE18R05S is suitable for power conversion and control modules in electric vehicle chargers to ensure charging efficiency and safety.
3. Solar inverter: This MOSFET can provide efficient power conversion in solar inverters, convert solar energy into usable electrical energy, and promote the development of clean energy.
4. LED lighting driver: The high performance and reliability of VBE18R05S make it a key component in LED lighting drivers, ensuring stable operation and long life of LED lamps.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
