Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
800V |
30（±V） |
3.5V |
2A |
|
|
2600 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Product model: VBE18R02S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Technology: SJ_Multi-EPI
-Package: TO252
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): ㊣30V
- Gate-source voltage threshold (Vth): 3.5V
- Drain resistance (m次) when gate-source voltage is 10V: 2600
- Maximum drain current (ID): 2A
Domain and module applications：
Application areas and module examples:
1. Industrial power modules: Due to its high drain-source voltage and higher drain current capability, VBE18R02S is suitable for industrial power modules such as power converters and inverters.
2. LED lighting driver: The low gate-source voltage threshold and low on-resistance of VBE18R02S make it an ideal choice in LED lighting driver circuits to achieve high efficiency and stable power output.
3. Electric vehicle charger: This MOSFET can be used in switching power supply modules in electric vehicle chargers to support high voltage and high current charging requirements and improve charging efficiency.
4. Solar inverter: Due to its high voltage and high current capabilities, VBE18R02S can be used in solar inverters to convert the DC output of solar panels into AC power for use in the power grid.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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