Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
850V |
30（±V） |
3.5V |
5A |
|
2750 (mΩ) |
2200 (mΩ) |
Plannar |
Detailed parameter description:
- Model: VBE185R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: Plannar
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=4.5V: 2750m次
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 5A
-Package: TO252
Domain and module applications：
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Industrial motor driver: It can be used as a power switch module in industrial motor control systems to provide reliable motor drive functions.
3. Solar inverter: In a solar inverter, high-efficiency conversion of solar panels and grid connection can be achieved.
4. High-voltage direct current (HVDC) system: It can be used as a power switch module in the HVDC system to achieve long-distance high-voltage direct current transmission.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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