VBE17R20S Product details
Product introduction:
The VBsemi VBE17R20S is a single N-channel field effect transistor with up to 700V drain-source voltage (VDS) and 20A drain current (ID). Made with SJ_Multi-EPI technology, it has excellent performance and stability. The package is TO252, suitable for various applications.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
- Model: VBE17R20S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 160
- Drain current (ID): 20A
- Process technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Power module: Due to its high drain voltage and drain current, it is suitable for high-power power modules such as switching power supplies and DC-DC converters.
2. Electric vehicle controller: Power switch module used in electric vehicle controller to achieve efficient driving and control of electric vehicles.
3. Industrial drives: Can be used in motor drive modules in industrial drives to improve the efficiency and reliability of industrial production equipment.
4. Solar inverter: suitable for switch modules in solar inverters to convert the DC output of solar panels into AC power.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image