Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
700V |
30（±V） |
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBE17R20S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 160
- Drain current (ID): 20A
- Process technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: Due to its high drain voltage and drain current, it is suitable for high-power power modules such as switching power supplies and DC-DC converters.
2. Electric vehicle controller: Power switch module used in electric vehicle controller to achieve efficient driving and control of electric vehicles.
3. Industrial drives: Can be used in motor drive modules in industrial drives to improve the efficiency and reliability of industrial production equipment.
4. Solar inverter: suitable for switch modules in solar inverters to convert the DC output of solar panels into AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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