Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
700V |
30（±V） |
3.5V |
12A |
|
|
340(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBE17R12S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 340m次
- Drain current (ID): 12A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Power adapter: The low on-resistance and high drain current of VBE17R12S make it suitable for switching power supply control in power adapters, which can improve energy conversion efficiency.
2. LED lighting driver: The product's high withstand voltage characteristics and low on-resistance make it an ideal choice for LED lighting drivers, which can achieve high-efficiency LED light output.
3. Solar inverter: In solar inverter, VBE17R12S can be used to achieve high-efficiency DC-AC conversion, converting solar energy into usable AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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