VBE17R12S Product details
Product introduction:
VBE17R12S is a VBsemi brand single N-channel field effect transistor with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO252. Its main features are an on-resistance of 340mΩ (at VGS=10V) and a drain current (ID) of 12A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 12A | 340(mΩ) | SJ_Multi-EPI |
- Model: VBE17R12S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance (when VGS=10V): 340m次
- Drain current (ID): 12A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
1. Power adapter: The low on-resistance and high drain current of VBE17R12S make it suitable for switching power supply control in power adapters, which can improve energy conversion efficiency.
2. LED lighting driver: The product's high withstand voltage characteristics and low on-resistance make it an ideal choice for LED lighting drivers, which can achieve high-efficiency LED light output.
3. Solar inverter: In solar inverter, VBE17R12S can be used to achieve high-efficiency DC-AC conversion, converting solar energy into usable AC power.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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