Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
700V |
30（±V） |
3.5V |
11A |
|
|
330(mΩ) |
SJ_Deep-Trench |
Detailed parameter description:
- Product model: VBE17R11SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 330m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO252
Domain and module applications：
Examples of product applicable fields and modules:
1. Power module: Since VBE17R11SE has high drain-source voltage and high drain current, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle charger: This product can be used as a switching tube in an electric vehicle charger to achieve a high-efficiency charging process.
3. Solar inverter: Since VBE17R11SE has high withstand voltage and low on-resistance, it is suitable for power switch modules in solar inverters to improve the conversion efficiency of the system.
4. Industrial electronic equipment: It can be used in power switches and power management modules in various industrial electronic equipment, such as frequency converters, UPS systems, etc., to improve the performance and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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