VBE17R11SE Product details
Product introduction:
VBsemi's VBE17R11SE is a Single N-type field effect transistor, manufactured using SJ_Deep-Trench technology and packaged in TO252. The product features a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance is 330mΩ at a gate-source voltage of 10V, and its maximum drain current (ID) is 11A.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 11A | 330(mΩ) | SJ_Deep-Trench |
- Product model: VBE17R11SE
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 330m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO252
Domain and module applications:
1. Power module: Since VBE17R11SE has high drain-source voltage and high drain current, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle charger: This product can be used as a switching tube in an electric vehicle charger to achieve a high-efficiency charging process.
3. Solar inverter: Since VBE17R11SE has high withstand voltage and low on-resistance, it is suitable for power switch modules in solar inverters to improve the conversion efficiency of the system.
4. Industrial electronic equipment: It can be used in power switches and power management modules in various industrial electronic equipment, such as frequency converters, UPS systems, etc., to improve the performance and reliability of the equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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