Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
700V |
30（±V） |
3.5V |
11A |
|
|
390(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE17R11S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 390m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Power management module: It can be used for power control and current regulation in power management equipment such as switching power supplies, UPS systems and inverters.
- LED lighting driver: suitable for power switching and brightness adjustment of LED lamps to achieve high-efficiency lighting control.
- Industrial control systems: can be used for power management and circuit protection in industrial automation equipment, frequency converters and motor drives.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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