VBE17R11S Product details
Product introduction:
VBsemi's VBE17R11S is a single N-channel MOSFET manufactured using SJ_Multi-EPI technology. It has high performance and reliability, and is packaged in TO252, suitable for various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 11A | 390(mΩ) | SJ_Multi-EPI |
- Brand: VBsemi
- Model: VBE17R11S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 390m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications:
The product is suitable for multiple areas and modules, such as:
- Power management module: It can be used for power control and current regulation in power management equipment such as switching power supplies, UPS systems and inverters.
- LED lighting driver: suitable for power switching and brightness adjustment of LED lamps to achieve high-efficiency lighting control.
- Industrial control systems: can be used for power management and circuit protection in industrial automation equipment, frequency converters and motor drives.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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