Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
700V |
30（±V） |
3.5V |
10A |
|
|
600 (mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Brand: VBsemi
- Model: VBE17R10S
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 600m次
- Maximum drain current (ID): 10A
- Technology: SJ_Multi-EPI
-Package:TO252
Domain and module applications：
Application example:
The product is suitable for multiple areas and modules, such as:
- Power module: can be used for power control and current regulation in switching power supplies, battery management systems and LED drivers.
- Communication equipment: suitable for power switching and signal conditioning in base station equipment, optical communication modules and network equipment.
- Automotive electronic systems: It can be used for power management and circuit protection in automotive electronic control fields such as automotive electrification systems, engine control units and on-board charging equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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