VBE17R08S Product details
Product introduction:
VBsemi's VBE17R08S is a Single N-type MOSFET with the following features:
- Brand: VBsemi
-Package: TO252
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 560 mΩ
- Maximum drain current (ID): 8A
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 8A | 560(mΩ) | SJ_Multi-EPI |
- Model: VBE17R08S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO252
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 560 m次
- Maximum drain current (ID): 8A
Domain and module applications:
1. Power management module: The parameters of VBE17R08S make it suitable for power management modules such as DC-DC converters (DC-DC converters) and DC-AC inverters.
2. LED driver: In LED lighting applications, efficient power switching devices are required to control the brightness of LEDs. VBE17R08S can be used as the switching element in the LED driver.
3. Industrial control systems: Because VBE17R08S has high drain voltage and current capabilities, it is suitable for power switching modules in industrial control systems, such as motor drivers and frequency converters.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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