Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
700V |
30（±V） |
3.5V |
8A |
|
|
560(mΩ) |
SJ_Multi-EPI |
Detailed parameter description:
- Model: VBE17R08S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO252
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 560 m次
- Maximum drain current (ID): 8A
Domain and module applications：
Examples of applicable fields and modules:
1. Power management module: The parameters of VBE17R08S make it suitable for power management modules such as DC-DC converters (DC-DC converters) and DC-AC inverters.
2. LED driver: In LED lighting applications, efficient power switching devices are required to control the brightness of LEDs. VBE17R08S can be used as the switching element in the LED driver.
3. Industrial control systems: Because VBE17R08S has high drain voltage and current capabilities, it is suitable for power switching modules in industrial control systems, such as motor drivers and frequency converters.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
