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VBE17R05S Product details

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Product introduction：

Product introduction:
VBsemi's VBE17R05S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 1000mΩ at VGS=10V, and a maximum The drain current (ID) is 5A. The package form is TO252.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 700V 30（±V） 3.5V 5A 1000(mΩ) SJ_Multi-EPI
Detailed parameter description:
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 1000m次
- ID (A): 5A
- Technology: SJ_Multi-EPI
-Package: TO252

Domain and module applications：

Examples of application areas and modules:
- Power management module: Can be used in low-power power management modules such as mobile phone chargers and portable power supplies.
- LED lighting driver: suitable for switching circuits in LED lighting drivers, providing high efficiency and reliability of LED lighting control.
- Industrial control system: used as a switching element in an industrial control system to control the power supply and signal transmission of motors, sensors and other equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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