VBE17R05S Product details
Product introduction:
VBsemi's VBE17R05S is a single N-channel power MOSFET manufactured using SJ_Multi-EPI technology. Its main features include a maximum drain-source voltage (VDS) of 700V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 1000mΩ at VGS=10V, and a maximum The drain current (ID) is 5A. The package form is TO252.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 700V | 30(±V) | 3.5V | 5A | 1000(mΩ) | SJ_Multi-EPI |
- VDS(V): 700V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 1000m次
- ID (A): 5A
- Technology: SJ_Multi-EPI
-Package: TO252
Domain and module applications:
- Power management module: Can be used in low-power power management modules such as mobile phone chargers and portable power supplies.
- LED lighting driver: suitable for switching circuits in LED lighting drivers, providing high efficiency and reliability of LED lighting control.
- Industrial control system: used as a switching element in an industrial control system to control the power supply and signal transmission of motors, sensors and other equipment.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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