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VBE17R02SE Product details

Product introduction:

Product introduction: VBsemi's VBE17R02SE is a single N-channel MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Deep-Trench technology, with TO252 package, suitable for a variety of application scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 700V 30(±V) 3.5V 2A 2200(mΩ) SJ_Deep-Trench
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 700V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 2200m次, and the maximum drain current is 2A.

Domain and module applications:

Examples of applicable fields and modules:
1. Low-power power management: Since VBE17R02SE has a lower maximum drain current, it is suitable for low-power power management modules, such as portable electronic equipment and consumer electronics.
2. LED driver: In LED lighting systems, this product can be used in low-power LED driver modules to achieve precise control and energy-saving management of LED lights.
3. Power switch: In various power switch applications, VBE17R02SE can be used in switching circuits to achieve efficient control and conversion of power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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