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VBE17R02S Product details

Product introduction:

VBsemi's VBE17R02S is a single N-channel field effect transistor with a drain-source voltage of 700V, a gate-source voltage of 30V, and a threshold voltage of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO252.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 700V 30(±V) 3.5V 2A 2400 (mΩ) SJ_Multi-EPI
Detailed parameter description:
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 2400
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI

Domain and module applications:

This product is suitable for the following areas and modules:
- Lighting applications: Can be used in LED drive circuits, power switches and lighting control modules to provide stable power output and high efficiency.
- Solar inverter: Suitable for inverter modules in solar power generation systems, providing high voltage withstand capability and low on-resistance.
- Industrial power supply: Power modules that can be used in industrial automation equipment, such as frequency converters, power transmission and UPS systems, to provide reliable power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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