Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
750V |
30（±V） |
3.5V |
6A |
|
2125 (mΩ) |
1700 (mΩ) |
Plannar |
Detailed parameter description:
- Brand: VBsemi
- Product model: VBE175R06
- Type: Single N-channel power MOSFET
- Maximum drain-source voltage (VDS): 750V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=4.5V: 2125m次
- On-resistance (m次) at VGS=10V: 1700m次
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO252
Domain and module applications：
Examples of applicable fields and modules:
1. Power module: VBE175R06 is suitable for switching power supplies and inverters in power modules, providing stable power output and efficient energy conversion.
2. Automotive electronic systems: This product can be used in drivers and battery management modules in automotive electronic systems to ensure the high efficiency and stable performance of electric vehicles.
3. Industrial control equipment: In industrial control equipment, VBE175R06 can be used in motor drivers and power modules to achieve high-efficiency control and stable operation of equipment.
4. Solar inverter: It is suitable for solar inverters to convert the DC power generated by solar panels into AC power to achieve high-efficiency conversion of solar power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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