Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
750V |
30（±V） |
3.5V |
4A |
|
3375 (mΩ) |
2700 (mΩ) |
Plannar |
Detailed parameter description:
- Product model: VBE175R04
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 4.5V: 3375m次
- On-resistance when gate-source voltage is 10V: 2700m次
- Maximum drain current (ID): 4A
- Technology: Plannar
-Package:TO252
Domain and module applications：
Examples of product applicable fields and modules:
1. Solar inverter: Since VBE175R04 has a high drain voltage and moderate drain current, it is suitable for power switch modules in solar inverters to improve the conversion efficiency and stability of the system.
2. Electric vehicle charging piles: It can be used as a power switch module in electric vehicle charging piles to achieve a high-efficiency charging process.
3. Industrial power module: Suitable for power switching devices in various industrial power modules, such as switching power supplies, inverters, etc., to provide stable and reliable power output.
4. Power electronic equipment: It can be used in power switch modules in various power electronic equipment, such as frequency converters, UPS systems, etc., to improve the performance and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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